4H-Silicon Carbide MOSFET

4H-Silicon Carbide MOSFET

Interface Structure, Defect States and Inversion Layer Mobility

Noor Publishing ( 17.03.2014 )

€ 59,90

تسوق من ماركت الكتب

Silicon carbide is the only wide band gap semiconductor that has a native oxide, and a leading candidate for development of next-generation, energy efficient, high power metal-oxide-semiconductor field effect transistors (MOSFETs). Progress in this technology has been limited by the semiconductor-dielectric interface structure and its effect on the inversion layer mobility. The major objective of this work is to study and improve 4H-SiC MOSFET interface structure, defect states and inversion layer mobility on the (11-20) crystal face of SiC (a-face), employing nitrogen and phosphorous passivation. We also use these results to explore the effect of reactive ion etching on the a-face, an important aspect of processing optimum power devices. We correlate electrical measurements, i.e. current-voltage (I-V) and capacitance-voltage (C-V) with physical characterization including X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS) and medium energy ion scattering (MEIS).

تفاصيل الكتاب:

ISBN-13:

978-3-639-71248-3

ISBN-10:

363971248X

EAN:

9783639712483

لغة الكتاب:

English

By (author) :

Gang Liu

عدد الصفحات:

124

النشر في:

17.03.2014

الصنف:

Electronics, electro-technology, communications technology